Measurement of the $D_{it}$ Changes Under BTI-Stress in 4H-SiC FETs Using the Subthreshold Slope Method
- Resource Type
- Conference
- Authors
- Steinmann, Philipp; Lichtenwalner, Daniel J.; Stein, Shane; Park, Jae-Hyung; Das, Suman; Ryu, Sei-Hyung
- Source
- 2024 IEEE International Reliability Physics Symposium (IRPS) International Reliability Physics Symposium (IRPS), 2024 IEEE. :P58.SiC-1-P58.SiC-4 Apr, 2024
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Engineering Profession
Temperature sensors
Temperature measurement
Voltage measurement
Density measurement
Thermal variables control
Threshold voltage
Reliability
Bias temperature instability stress
Interface trap density
Power MOSFET
Subthreshold slope
- Language
- ISSN
- 1938-1891
The non-ideality in the subthreshold slope can be used to extract interface trap densities $D_{it}$ values. We have applied this method to monitor changes in $D_{it}$ under BTI stress and compare them to fixed oxide charges with regards to their impact on threshold voltage.