Modeling Substrate Voltage Effects on GaN I-V Characteristics with ASM-HEMT model
- Resource Type
- Conference
- Authors
- Khandelwal, Sourabh; Stecklein, Gordon; Herman, Tom
- Source
- 2022 IEEE Applied Power Electronics Conference and Exposition (APEC) Applied Power Electronics Conference and Exposition (APEC), 2022 IEEE. :1731-1734 Mar, 2022
- Subject
- Power, Energy and Industry Applications
Voltage measurement
Density measurement
Logic gates
SPICE
Silicon
Power electronics
Data models
GaN power switch
SPICE models
GaN SPICE model
GaN IC
ASM-HEMT
- Language
- ISSN
- 2470-6647
The substrate voltage $V_{b}$ for GaN on silicon power devices affects their characteristics. The impact of substrate voltage becomes especially critical for the emerging monolithic and integrated circuits. To the best of the authors' knowledge, available GaN compact models neglect the effect of substrate voltage on device characteristics as the substrate is usually grounded in most applications. In this paper, we develop a physics-based model for the substrate-voltage dependence of $I-V$ characteristics of GaN devices. The developed model shows excellent agreement with measurements for GaN devices in both linear and saturation and for different gate widths.