Performance Comparison of HBTs and Quasi E-mode PHEMTs for Single Supply High Efficiency Power Amplifiers
- Resource Type
- Conference
- Authors
- Tkachenko, Y.; Wei, C.; Sprinkle, S.; Gering, J.; Lee, J.; Kao, T.; Ho, Y. Zhao W.; Sun, M.; Bartle, D.
- Source
- 2001 31st European Microwave Conference Microwave Conference, 2001. 31st European. :1-4 Sep, 2001
- Subject
- Fields, Waves and Electromagnetics
PHEMTs
Power supplies
High power amplifiers
Heterojunction bipolar transistors
Switches
Voltage
Stability
Radio frequency
Impedance
Circuits
- Language
Performance of an HBT and a Quasi Enhancement Mode PHEMT (QE-PHEMT) unit cell is compared for wireless telephone PA applications. While the HBT has advantages of smaller chip size and single supply with no drain switch operation, the QE-PHEMT has higher efficiency and better low voltage characteristics. PA power control and device design trade-offs for both technologies are also discussed.