Investigation of the Meyer-Neldel Rule in Si MOSFETs
- Resource Type
- Periodical
- Source
- IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 41(12):1821-1824 Dec, 2020
- Subject
Engineered Materials, Dielectrics and Plasmas Components, Circuits, Devices and Systems Simulation Electrostatics Semiconductor device modeling Silicon MOSFET Doping Meyer-Neldel rule semiconductor device modeling activation energy - Language
- ISSN
- 0741-3106
1558-0563