Analysis of Barrier Parameters on the Extended Threshold Wavelength of Infrared Detectors
- Resource Type
- Periodical
- Authors
- Somvanshi, D.; Chauhan, D.; Perera, A.G.U.; Li, L.; Chen, L.; Linfield, E.H.
- Source
- IEEE Photonics Technology Letters IEEE Photon. Technol. Lett. Photonics Technology Letters, IEEE. 30(18):1617-1620 Sep, 2018
- Subject
- Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Infrared detectors
Hot carriers
Gallium arsenide
Energy barrier
Heterojunctions
Infrared photodetectors
threshold wavelength
heterojunction
- Language
- ISSN
- 1041-1135
1941-0174
The threshold wavelength $(\lambda _{t})$ of spectral photoresponse of any semiconductor photodetector is determined by the minimum energy gap $(\Delta = 1.24/ \lambda _{t})$ of the material, or the interfacial energy gap of the heterostructure. It was shown before that the threshold limit can be extended beyond $\lambda _{t}$ to obtain an extended threshold wavelength $\lambda _{{{\text {eff}}}} (\lambda _{{{\text {eff}}}}\gg \lambda _{t})$ in detectors with a barrier energy offset $(\boldsymbol{\delta } {E}_{v})$ and a gradient. Here, in this letter, we analyze the effect of barrier parameters such as $\boldsymbol{\delta } {E}_{v}$ and gradient on the extended threshold wavelength of infrared detectors for the temperature range up to 50 K.