A 300-GHz Band Chip-to-Waveguide Transition on Proton-Irradiated Standard 65nm CMOS Si Substrate for Flip-Chip Packaging Implementation
- Resource Type
- Conference
- Authors
- Herdian, Hans; Inoue, Takeshi; Sogabe, Masatsugu; Shirane, Atsushi; Okada, Kenichi
- Source
- 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022 International Microwave Symposium - IMS 2022, 2022 IEEE/MTT-S. :673-675 Jun, 2022
- Subject
- Components, Circuits, Devices and Systems
Computing and Processing
Engineering Profession
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Protons
Radiation effects
Semiconductor device measurement
Prototypes
Insertion loss
Packaging
Silicon
terahertz
transition
package
CMOS process
proton irradiation
- Language
- ISSN
- 2576-7216
This paper presents a 300GHz band probe-type chip-to-waveguide transition implemented on standard 65nm CMOS process. This design utilizes the bump from flip-chip packaging process and the PCB top metal to form a back-short structure. The Si substrate around the transition is proton-irradiated to increase substrate resistivity and minimize substrate loss. A back-to-back prototype was manufactured and measured both before and after irradiation. The prototypes exhibit a minimum insertion loss of 4.9dB before irradiation and 2.8dB after irradiation at 240GHz. Both prototypes achieve 63GHz 3-dB bandwidth with less than 10-dB return loss across the operating frequency.