300GHz Band On-Chip Vivaldi Antenna on Dual-Layer Proton Irradiated CMOS Si Substrate
- Resource Type
- Conference
- Authors
- Herdian, Hans; Inoue, Takeshi; Hirano, Takuichi; Sogabe, Masatsugu; Shirane, Atsushi; Okada, Kenichi
- Source
- 2021 IEEE Asia-Pacific Microwave Conference (APMC) Microwave Conference (APMC), 2021 IEEE Asia-Pacific. :440-442 Nov, 2021
- Subject
- Components, Circuits, Devices and Systems
Fields, Waves and Electromagnetics
Protons
Antenna measurements
Temperature measurement
Radiation effects
Semiconductor device measurement
Heat treatment
Vivaldi antennas
300GHz
on-chip
antenna
Vivaldi
proton irradiation
- Language
This paper presents a 300GHz band on-chip Vivaldi antenna implemented on standard 65nm CMOS technology. Dual-layer proton irradiation is used to reduce substrate loss with smaller proton fluence requirements compared to conventional proton irradiation without compromising thermal reliability. The Si substrate is ground to 50µm thickness to minimize radiation pattern distortion due to surface waves. The irradiation process improves the measured antenna gain by around 6.3dB, resulting in 3.1dBi measured gain at 285GHz after irradiation. To check thermal reliability, the antenna chip is heated to 260°C for 1-minute to simulate the peak temperature of lead-free reflow soldering. After heating, the antenna still maintains 2.3dBi measured antenna gain at 285GHz.