Dual-Layer Proton Irradiation for Creating Thermally-Stable High-Resistivity Region in Si CMOS Substrate
- Resource Type
- Conference
- Authors
- Herdian, Hans; Inoue, Takeshi; Hirano, Takuichi; Sogabe, Masatsugu; Shirane, Atsushi; Okada, Kenichi
- Source
- ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC) Solid-State Device Research Conference (ESSDERC), ESSDERC 2021 - IEEE 51st European. :191-194 Sep, 2021
- Subject
- Components, Circuits, Devices and Systems
Photonics and Electrooptics
Protons
Q-factor
Degradation
Radiation effects
Annealing
Thermal resistance
Silicon
low fluence
proton
irradiation
bulk CMOS
high-resistivity substrate
inductor
annealing
- Language
This paper presents dual-layer proton irradiation profile to improve the thermal stability of high-resistivity substrate formed by low-fluence proton irradiation. Dual-layer irradiation uses targeted irradiation to the Si-SiO 2 interface to reduce the fluence required for preventing the formation of conduction layer after annealing. Thermal stability of effective substrate resistivity is evaluated indirectly through inductor Q-factor measurement before and after annealing at 260°C for 1-minute. With the same total fluence of $4\times 10^{14}\text{cm}^{-2}$, measurement result shows dual-layer irradiation profile can suppress post-anneal Q-factor degradation from 17% in conventional proton irradiation to 1%. The required active devices margin from irradiated area is reduced by 26% to $22\mu \mathrm{m}$, compared to $30\mu \mathrm{m}$ in conventional irradiation.