Matching properties of MOS transistors and delay line chains with self-aligned source/drain contacts
- Resource Type
- Conference
- Authors
- Bolt, M.; Cantatore, E.; Socha, M.; Aussems, C.; Solo, J.
- Source
- Proceedings of International Conference on Microelectronic Test Structures Microelectronic test structures Microelectronic Test Structures, 1996. ICMTS 1996. Proceedings. 1996 IEEE International Conference on. :21-25 1996
- Subject
- Components, Circuits, Devices and Systems
MOSFETs
Delay lines
Circuit testing
Electrical resistance measurement
CMOS logic circuits
CMOS process
MOS devices
Integrated circuit measurements
Threshold voltage
Intrusion detection
- Language
This work has shown for the first time that the matched parameter spreads for MOSFETs with and without self-aligned source/drain contacts are identical. From these observations it can be concluded that source/drain series resistance variations do not contribute significantly to MOS transistor mismatch. An example has been given which shows how to apply matching data to circuits. A similar circuit mismatch methodology could be used to analyse yield problems in clock systems of fast digital logic.