In this paper an optimized heterostructure CdTe solar cell comprising of TiO 2 as the electron transport layer (ETL) and CuS as the hole transport layer (HTL) have been investigated. The device structure, ITO/TiO 2 /CdS/CdTe/CuS/Au numerically modelled solar cell exhibited enhanced output photovoltaic parameters of $\text{Voc}=1.09\ \mathrm{V},\ \text{Jsc}=30.83\ \text{mA}/\text{cm}^{2}$' Fill factor = 81.85% and efficiency =27.46%. These results demonstrated significant improved results than that of the simulated as well as experimentally fabricated CdTe/CdS/ITO solar cells. In the second phase of study, the influence of temperature, series-shunt resistance, and carrier concentrations of ETL and HTL on the optimized structure have been examined. Consequently, this optimized structure can be fabricated experimentally for in-depth analysis.