A 6-F/sup 2/ bit cell design based on one transistor and two uneven magnetic tunnel junctions structure and low power design for MRAM
- Resource Type
- Periodical
- Source
- IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 53(7):1530-1538 Jul, 2006
- Subject
Components, Circuits, Devices and Systems Engineered Materials, Dielectrics and Plasmas Magnetic memories Random access memories Magnetoresistive devices High density low power magnetic memories magnetic tunnel junction (MTJ) magnetoresistive devices magnetoresistive random access memory (MRAM) - Language
- ISSN
- 0018-9383
1557-9646