Direct Cu electroplating on CoWB electroless barrier layer
- Resource Type
- Conference
- Authors
- Chen, Shaohan; Shiraiwa, Naoya; Saida, Ryota; Shimizu, Tomohiro; Ito, Takeshi; Shingubara, Shoso
- Source
- 2023 International Conference on Electronics Packaging (ICEP) Electronics Packaging (ICEP), 2023 International Conference on. :229-230 Apr, 2023
- Subject
- Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Photonics and Electrooptics
Power, Energy and Industry Applications
Signal Processing and Analysis
Electrochemical deposition
Annealing
Additives
Adhesives
Metals
Plating
Filling
3-D integration technologies
Copper
TSV
Electroless barrier metal
- Language
TSV filling process using electroless plating of CoWB barrier layer and direct electroplating of Cu on it was demonstrated. Conformal deposition of the barrier layer was performed for the high aspect ratio TSVs. Cu electrodeposition profiles for TSVs were studied by varying additive concentration and current density. Adhesion property measured by stud-pull test suggested that the annealing at 200 °C drastically improve adhesion strength of both a barrier layer and Cu/barrier stacked structures.