Enhancement-mode GaAs MESFET technology for low consumption power and low noise applications
- Resource Type
- Conference
- Authors
- Nakajima, S.; Matsuzaki, K.-I.; Otobe, K.; Nishizawa, H.; Shiga, N.
- Source
- 1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4) Microwave symposium Microwave Symposium Digest, 1994., IEEE MTT-S International. :1443-1446 vol.3 1994
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Aerospace
Communication, Networking and Broadcast Technologies
Photonics and Electrooptics
Gallium arsenide
MESFETs
Noise measurement
Manufacturing processes
Fabrication
Noise figure
Gain measurement
- Language
- ISSN
- 0149-645X
Ion implanted enhancement-mode GaAs MESFETs with an advanced LDD structure have been developed. A manufacturable self-aligned process based on a dummy gate was used for the fabrication of 0.3 /spl mu/m gate device. At 1 mW operation, a noise figure (NF) of lower than 1.0 dB with an associated gain of higher than 9.0 dB was measured at 6 GHz. Furthermore, a standard deviation of NF as small as 0.05 dB at an average of 0.83 dB was obtained over a 3"/spl Phi/ wafer.ETX