C-band and X-band class F, F-1 GaN MMIC PA design for envelope tracking systems
- Resource Type
- Conference
- Authors
- Collins, Gayle; Fisher, Jeremy; Radulescu, Fabian; Barner, Jeff; Sheppard, Scott; Worley, Rick; Woods, Brian
- Source
- 2015 European Microwave Conference (EuMC) Microwave Conference (EuMC), 2015 European. :1172-1175 Sep, 2015
- Subject
- Aerospace
Bioengineering
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Engineering Profession
Fields, Waves and Electromagnetics
MMICs
Harmonic analysis
Gallium nitride
Modulation
Impedance
Power amplifiers
HEMTs
envelope tracking
MMIC
load-pull
characterization
- Language
A 4.5GHz Class F GaN MMIC power amplifier design is presented in this paper. The MMIC is designed to be used with an envelope tracking amplifier for efficiency enhancement. The characterization and modeling of a 6×100 um die for the power amplifier design to be used in an envelope tracking system is described and discussed. The design was fabricated in a 0.14 um GaN HEMT process. The results of an inverse Class F design at 10GHz fabricated in the same process are presented as well. The 32W inverse Class F design achieved 54.4% system drain efficiency at 6.6dB back-off, with a 20MHz 16 QAM LTE signal, the highest reported efficiency at 10GHz in signal back-off. The design, characterization and modeling provide new insight into the strategy necessary for the successful realization of envelope tracking power amplifiers.