Cryogenic Modeling of GaAs-pHEMT and its Application in Low-power MMIC CLNA Design for Radio Astronomy
- Resource Type
- Conference
- Authors
- Liu, Jie; Shan, Wenlei; Kojima, Takafumi; Yao, Qijun
- Source
- 2019 IEEE Asia-Pacific Microwave Conference (APMC) Asia-Pacific Microwave Conference (APMC), 2019 IEEE. :1366-1368 Dec, 2019
- Subject
- Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Cryogenics
Receivers
HEMTs
MODFETs
Resistors
Radio astronomy
semiconductor device modeling
MMIC amplifiers
low-power
cryogenic electronics
- Language
The small signal equivalent circuit parameters of GaAs-pHEMTs have been extracted with a cryogenic probe station at both 300 K and 4 K. The drain bias current dependent performances of the critical parameters namely g m and R ds have been obtained as well. In addition, the critical noise parameter T d in the Pospieszalski noise model is determined as a function of drain current by fitting the simulated and measured noise of a prototype MMIC cryogenic low noise amplifier (CLNA) with the same process technology. Based on the cryogenic models established at the optimal low-power bias point, a cryogenic low-power MMIC LNA operating in the frequency range 2.5∼5 GHz was designed, fabricated and tested at 4 K. The cryogenic MMIC LNA achieved a gain greater than 22 dB and a typical noise temperature of 11 K with the power dissipation of only 1.2 mW. The results obtained indicated that the low-power MMIC amplifiers can be used in the large format integrated focal plane array receivers for the astronomy application.