Very high performance GaN-on-GaN diodes
- Resource Type
- Conference
- Authors
- Kizilyalli, Isik C.; Edwards, Andrew; Bour, David; Shah, Hemal; Disney, Don; Nie, Hui
- Source
- The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications Wide Bandgap Power Devices and Applications (WiPDA), 2013 IEEE Workshop on. :1-5 Oct, 2013
- Subject
- Aerospace
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Engineering Profession
Photonics and Electrooptics
Power, Energy and Industry Applications
Transportation
Gallium nitride
Schottky diodes
Silicon carbide
Substrates
Performance evaluation
Silicon
power semiconductors
bulk GaN
diodes
- Language
Vertical diodes have been fabricated on low defect density bulk GaN substrates. The devices demonstrate performance near theoretical limits for on-state resistance at a given rated breakdown voltage, based on GaN material properties. Breakdown voltage up to 3.7 kV has been measured. Measurements reveal robust avalanche breakdown, critical in an inductive circuit environment. Measurement of switching transients (5–25A) indicates the lack of minority carrier storage and low capacitances resulting in very low switching losses for the devices.