SiGe HBT with fx/fmax of 505 GHz/720 GHz
- Resource Type
- Conference
- Source
- 2016 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2016 IEEE International. :3.1.1-3.1.4 Dec, 2016
- Subject
Components, Circuits, Devices and Systems Silicon germanium Heterojunction bipolar transistors Silicon carbide Logic gates Delays Ring oscillators Annealing - Language
- ISSN
- 2156-017X