A highly reliable 1.8 V 1 Mb Hf0.5Zr0.5O2-based 1T1C FeRAM Array with 3-D Capacitors
- Resource Type
- Conference
- Authors
- Okuno, Jun; Kunihiro, Takafumi; Yonai, Tsubasa; Ono, Ryo; Shuto, Yusuke; Alcala, Ruben; Lederer, Maximilian; Seidel, Konrad; Mikolajick, Thomas; Schroeder, Uwe; Tsukamoto, Masanori; Umebayashi, Taku
- Source
- 2023 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2023 International. :1-4 Dec, 2023
- Subject
- Bioengineering
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Nuclear Engineering
Photonics and Electrooptics
Power, Energy and Industry Applications
Robotics and Control Systems
Signal Processing and Analysis
Voltage measurement
Nonvolatile memory
Ferroelectric films
Capacitors
Random access memory
Voltage
Reliability
- Language
- ISSN
- 2156-017X
This study proposes a novel 1 Mb one-transistor one-capacitor ferroelectric random access memory array based on ferroelectric Hf 0.5 Zr 0.5 O 2 with 3D cylindrical capacitors. We obtain a perfect functionality with a sufficient memory window at a small projected cylinder area of 0.028 μm 2 at an operating voltage of 1.8 V by reducing the C BL and optimizing the structure of the capacitors. We achieve a cycling endurance of 10 11 cycles and 1-month retention at 85°C. The reliability is further improved to over 10 12 cycles and 10 years at 85°C retention if the operating voltage is increased to 2.4 V. This technology matches the requirements of last-level cache and low-power systems in chips for Internet of Things applications.