First indirectly diode pumped Yb:SFAP laser, reaching the watt level at 985 nm
- Resource Type
- Conference
- Authors
- Castaing, Marc; Balembois, Francois; Georges, Patrick; Georges, Thierry; Schaffers, Kathleen; Tassano, John
- Source
- 2008 Conference on Lasers and Electro-Optics and 2008 Conference on Quantum Electronics and Laser Science Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on. :1-2 May, 2008
- Subject
- Photonics and Electrooptics
Components, Circuits, Devices and Systems
Laser excitation
Pump lasers
Laser transitions
Erbium-doped fiber lasers
Solid lasers
Semiconductor diodes
Power lasers
Neodymium
Crystals
Ytterbium
(140.3480) Lasers, diode pumped
(140.3530) Lasers, neodymium
(140.3580) Lasers, solid-state
(140.3615) Lasers, Ytterbium
- Language
We present the first demonstration of the three-level-laser transition at 985nm in an Yb:S-FAP crystal intracavity pumped at 914nm. We obtained 940mW output power at 985nm for 20W incident pump power at 808nm.