On the Electro-Thermal 2D FEM Parametric Analysis of SiC Vertical MOSFET Including Gate-Oxide Charge-Trapping Thermal Dependency: Application for Fast Transient Extreme Short-Circuit Operation
- Resource Type
- Conference
- Authors
- Cazimajou, Thibauld; Sarraute, Emmanuel; Richardeau, Frederic
- Source
- 2023 30th International Conference on Mixed Design of Integrated Circuits and System (MIXDES) Mixed Design of Integrated Circuits and System (MIXDES), 2023 30th International Conference on. :212-217 Jun, 2023
- Subject
- Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Semiconductor device modeling
MOSFET
Electron traps
Analytical models
Mobility models
Software
Finite element analysis
Finite Element Simulation
Power Electronics
SiC Mosfet
Oxide trapped-charges
Short-Circuit Operation
- Language
This article proposes a generic and complete electro-thermal 4H-SiC physical Mosfet model. Static and transient in hard short-circuit operation behaviors are successfully performed using 2D Comsol™ software. Influence of fixed charges and traps at the 4H-SiC/SiO2 interface has been highlighted, both for static and transient. An additional mobility coefficient through Arora's mobility model was then suggested to fully fit the transient model in hard short-circuit operation.