High electron mobility in indium-rich pseudomorphic In/sub x/Ga/sub 1-x/As/In/sub 0.52/Al/sub 0.48/As structures grown by MBE on InP
- Resource Type
- Conference
- Authors
- Drouot, V.; Gendry, M.; Hollinger, G.; Santinelli, C.; Letartre, X.; Viktorovitch, P.
- Source
- 1993 (5th) International Conference on Indium Phosphide and Related Materials Indium phosphide and related materials Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on. :451-454 1993
- Subject
- Engineered Materials, Dielectrics and Plasmas
Components, Circuits, Devices and Systems
Photonics and Electrooptics
Electron mobility
Indium gallium arsenide
Indium compounds
Indium phosphide
HEMTs
Temperature distribution
Epitaxial layers
Fabrication
MODFETs
Charge transfer
- Language
High electron mobility pseudomorphic In/sub x/Ga/sub 1-x/As/InAlAs heterostructures have been fabricated on InP for a wide range of In composition and growth temperatures. Both mobility and carrier concentrations can be increased by increasing the indium content in the channel up to x=0.75. The highest performance has been obtained with x=0.75 for a growth temperature of 500/spl deg/C, when adapted growth conditions or growth interruptions are used to reduce the interface roughness. The electron mobility of such a structure reaches 14,500 cm/sup 2//V.s at 300 K and 101,000 cm/sup 2//V.s at 77 K for a two-dimensional electron gas concentration of 2.4 10/sup 12/ cm/sup -2/.ETX