Gate driver integrated circuit for high-current and high-speed insulated-gate bipolar transistors used in hybrid electric vehicle and electric vehicle inverters
- Resource Type
- Conference
- Authors
- Sakurai, Naoki; Yahata, Koichi
- Source
- 2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia (IFEEC 2017 - ECCE Asia) Future Energy Electronics Conference and ECCE Asia (IFEEC 2017 - ECCE Asia), 2017 IEEE 3rd International. :947-952 Jun, 2017
- Subject
- Power, Energy and Industry Applications
Insulated gate bipolar transistors
Logic gates
Integrated circuits
MOSFET
Inverters
Capacitance
IGBT
gate driver
HEV/EV
inverter
short circuit
- Language
We developed a gate driver IC that can power IGBTs of up to 500 amperes for HEVs and EVs. A newly developed Zener clamping circuit effectively suppressed the IGBT spike voltage in short circuit (SC) mode. The silicon-on-insulator (SOI) process was utilized to achieve high temperature operation and high surge protection.