Supply voltage switching dual-band SiGe HBT VCOs using a dual-band resonator with inductor-loaded varactor diodes
- Resource Type
- Conference
- Authors
- Itoh, Yasushi; Hasegawa, Hiroyuki; Shirata, Masaki; Sakamoto, Kazuyoshi
- Source
- 2009 IEEE MTT-S International Microwave Symposium Digest Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International. :1289-1292 Jun, 2009
- Subject
- Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Communication, Networking and Broadcast Technologies
Dual band
Voltage
Silicon germanium
Germanium silicon alloys
Heterojunction bipolar transistors
Varactors
Diodes
Voltage-controlled oscillators
Frequency
Size control
VCO
SiGe HBT
dual-band
resonator
supply voltage switching
inductor-loaded varactor
- Language
- ISSN
- 0149-645X
A supply voltage switching dual-band SiGe HBT VCO for the next generation multi-band and multi-mode wireless radios is presented. It employs a single dual-band resonator with inductor-loaded varactor diodes and achieves a dual-band performance by switching a supply voltage. High performance and miniaturized size can be expected since no additional VCOs, resonators, matching elements, control voltages or circuits are required. The implemented 0.35-µm SiGe HBT VCO has achieved a tuning range from 0.82 to 1.04 GHz for a V CC of 3.5 V and from 2 to 2.54 GHz for a V CC of 5 V. The phase noise at 100 kHz offset is −111 dBc/Hz at 0.93 GHz center frequency and −112 dBc/Hz at 2.27 GHz center frequency. This is the first report on the dual-band VCO with a single dual-band resonator switched by a supply voltage.