Comparison of Single-Event Transients in an Epitaxial Silicon Diode Resulting From Heavy-Ion-, Focused X-Ray-, and Pulsed Laser-Induced Charge Generation
- Resource Type
- Periodical
- Source
- IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 68(5):626-633 May, 2021
- Subject
Nuclear Engineering Bioengineering X-ray lasers Ions Single event transients Silicon Shape Semiconductor diodes Focused X-ray heavy ions pulsed laser single-event effects (SEEs) single-event transients (SETs) two-photon absorption (TPA) - Language
- ISSN
- 0018-9499
1558-1578