Non-conducting Hot carrier temperature activation and temperature sense effect
- Resource Type
- Conference
- Authors
- Federspiel, X.; Diouf, C.; Arunachalam, B.; Roy, D.; Cacho, F.
- Source
- 2024 IEEE International Reliability Physics Symposium (IRPS) International Reliability Physics Symposium (IRPS), 2024 IEEE. :1-6 Apr, 2024
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Engineering Profession
Temperature sensors
Temperature distribution
MOSFET
Hot carriers
Aging
Distance measurement
Reliability
- CMOS reliability
OFF -State
hot carrier
temperature activation
- Language
- ISSN
- 1938-1891
Non-conducting hot carrier can induce significant drift of MOS transistor parameters especially at high temperature which is often reported to be worst case. We show here that activation energy accounts not only for defect generation mechanisms temperature activation but also for significant temperature sense effect. Such methods, separating both contributions, give insights on aging mechanisms.