On-State Voltage Measurement of High-Side Power Transistors in Three-Phase Four-Leg Inverter for In-Situ Prognostics
- Resource Type
- Conference
- Authors
- Roy, Chondon; Kim, Namwon; Gafford, James; Parkhideh, Babak
- Source
- 2021 IEEE Energy Conversion Congress and Exposition (ECCE) Energy Conversion Congress and Exposition (ECCE), 2021 IEEE. :2770-2776 Oct, 2021
- Subject
- Engineering Profession
General Topics for Engineers
Power, Energy and Industry Applications
Transportation
Resistance
Voltage measurement
Current measurement
Power transistors
Inverters
Time measurement
Real-time systems
in-situ prognostics
on-state resistance
on-state voltage
real-time monitoring
silicon carbide MOSFET
three-phase inverter
- Language
- ISSN
- 2329-3748
This paper presents the challenges of implementing in-situ prognostics to practical power converters and proposes a new on-state voltage (V DSON ) monitoring circuit for the high-side power transistors. The proposed approach references the drain of the high-side transistors for their V DSON measurement. This circuit allows V DSON measurement of not only multiple high-side transistors but also multiple low-side transistors at the same time. The measured V DSON is used to calculate on-state resistance (R DSON ) in real-time using the drain-current measured using an off-the-shelf hall effect current sensor. The proposed circuit is used in a 75 kW 1000 V DC three-phase DC-AC inverter for in-situ prognostics. Validations of the proposed V DSON measurement circuit and R DSON monitoring are presented using theoretical circuit analysis and experimental results. The measured R DSON is found to be in the datasheet specified range.