Hot electron transport in 3-terminal devices based on magnetic tunnel junctions
- Resource Type
- Conference
- Authors
- Lacour, D.; Hehn, M.; Montaigne, F.; Jaffres, H.; Rottlander, P.; Nguyen, F.; Van Dau; Petroff, F.; Schuhl, A.
- Source
- IEEE International Digest of Technical Papers on Magnetics Conference International magnetic conference Magnetics Conference, 2002. INTERMAG Europe 2002. Digest of Technical Papers. 2002 IEEE International. :ER4 2002
- Subject
- Fields, Waves and Electromagnetics
Electrons
Magnetic tunneling
Magnetic field measurement
Electrodes
Voltage
Electric variables
Magnetic devices
Electric variables measurement
Dielectrics and electrical insulation
Polarization
- Language
Summary form only given. Magnetic field-dependent electrical characteristics of magnetic tunnel junction-based 3-terminal devices have been measured on M/sub 1//I/sub 1//M/sub 2//I/sub 2//M/sub 3/ stacks where M are ferromagnetic electrodes and I are insulating barriers (Al/sub 2/O/sub 3/ or TaO). A spin polarised current is pumped from the voltage biased M/sub 1//I/sub 1//M/sub 2/ junction and injected in the I/sub 2//M/sub 3/ collector junction. The collected current in M/sub 3/ is then dependent on the voltages applied to each tunnel junction, the orientation of the electrode magnetisations and the thickness of the M/sub 2/ electrode. Besides the fundamental interest in measuring the properties of nonequilibrium spin-dependent hot electron transport, 3-terminal devices appear to be good candidates for a new generation of magnetic field-dependent devices. The control of hot electron transmission in a double tunnel junction is the keystone to ensure asymmetric diodes or hot electron magnetic field-dependent transistors. Experimental results have been compared to computations made in the framework of the parabolic band model.