Improved sidewall doping of extensions by AsH3 ion assisted deposition and doping (IADD) with small implant angle for scaled NMOS Si bulk FinFETs
- Resource Type
- Conference
- Source
- 2013 IEEE International Electron Devices Meeting Electron Devices Meeting (IEDM), 2013 IEEE International. :20.6.1-20.6.4 Dec, 2013
- Subject
Components, Circuits, Devices and Systems Doping FinFETs Implants Silicon Resistance Resists - Language
- ISSN
- 0163-1918
2156-017X