A 10 GHz dielectric resonator oscillator using GaN technology
- Resource Type
- Conference
- Authors
- Rice, P.; Moore, M.; Barnes, A.R.; Uren, M.J.; Malbert, N.; Labat, N.; Sloan, R.
- Source
- 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535) Microwave symposium digest Microwave Symposium Digest, 2004 IEEE MTT-S International. 3:1497-1500 Vol.3 2004
- Subject
- Fields, Waves and Electromagnetics
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Aerospace
Communication, Networking and Broadcast Technologies
Photonics and Electrooptics
Dielectrics
Oscillators
Gallium nitride
Phase noise
HEMTs
Gallium arsenide
PHEMTs
Aluminum gallium nitride
Frequency
Silicon germanium
- Language
- ISSN
- 0149-645X
A 10 GHz AlGaN/GaN HEMT-based dielectric resonator oscillator (DRO) is presented. This device exhibits -118dBc/Hz phase noise at 100KHz offset frequency range and is the lowest yet reported. This phase noise and power capabilities of GaN HEMT oscillators are compared to those of two mature technologies, an Infineon SiGe HBT (BFP620) and Transcom GaAs pHEMT (TC1401). The oscillator output power density using a GaN HEMT was found to be 14 times greater than using an equivalent GaAs pHEMT. Phase noise improvements between two different GaN devices, resulting from developments in GaN technology, are also presented.