GaSb-based II-VI Semiconductors for Application in Next Generation Infrared Detectors
- Resource Type
- Conference
- Authors
- Lei, Wen; Ren, Yongling; Madni, Imtiaz; Gu, Renjie; Umana-Membreno, Gilberto A.; Antoszewski, Jarek; Faraone, Lorenzo
- Source
- 2018 IEEE Research and Applications of Photonics In Defense Conference (RAPID) Photonics In Defense Conference (RAPID), 2018 IEEE Research and Applications of. :1-4 Aug, 2018
- Subject
- Photonics and Electrooptics
II-VI semiconductor materials
Cadmium compounds
Substrates
Buffer layers
Strain
Detectors
Lattices
II-VI semiconductor
GaSb
infrared detectors
- Language
In this work, we will review our recent effort on developing GaSb-based II-VI semiconductors (mainly HgCdTe/CdTe and HgCdSe epitaxial materials grown on GaSb substrates) for making next generation infrared detectors with features of lower cost and larger array format size.