Bandwidth Optimization and Fabrication of High-Power MUTC-PD
- Resource Type
- Periodical
- Authors
- Wang, X.; Huang, Y.; Tan, S.; Du, J.; Yang, M.; Liu, K.; Duan, X.; Ren, X.
- Source
- IEEE Journal of Quantum Electronics IEEE J. Quantum Electron. Quantum Electronics, IEEE Journal of. 60(2):1-6 Apr, 2024
- Subject
- Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Bandwidth
Indium gallium arsenide
Absorption
Indium phosphide
Charge carrier processes
Photodiodes
Doping
Optimization methods
Photodiode
carrier transport
graded doping
modulation depth
- Language
- ISSN
- 0018-9197
1558-1713
A high-speed and high-power modified uni-traveling-carrier photodiode (MUTC-PD) is optimized and fabricated. The optimization method takes carrier transport as the core and considers the hole transport time limited bandwidth of the MUTC-PD for the first time. Taking into account the impact of the electron transport time and RC time constant on device performance, the device is simulated and fabricated. In structure epitaxy, it is proposed to use graded doping to fit Gaussian doping to reduce the epitaxial growth error. The measured bandwidth of the MUTC-PD reaches 34 GHz and the RF output power reaches 17.1 dBm with the mesa diameter of $20~\mu \text{m}$ . In addition, the influence of modulation depth on high-speed and high-power performance is studied.