Evaluation of Surface Recombination Velocity by Means of Computational Simulations and I×V Curves
- Resource Type
- Conference
- Authors
- Lima, Marcelo D. de; Borrely, Thales; Quivy, Alain A.
- Source
- 2019 34th Symposium on Microelectronics Technology and Devices (SBMicro) Microelectronics Technology and Devices (SBMicro), 2019 34th Symposium on. :1-3 Aug, 2019
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Optical refraction
Optical variables control
Optical reflection
Gallium arsenide
Photovoltaic cells
Green products
Optical surface waves
surface recombination velocity
solar cell
GaAs
- Language
We estimated the reduction of surface recombination velocity (SRV) resulting from the deposition of an $Al_{0.28}Ga_{0.72}As$ window layer (WL) on top of a GaAs Solar cell (SC) only by analyzing, simulating and comparing $\mathrm{I}\times \mathrm{V}$ curves. Two samples were analyzed, where the only difference between them was the presence of the WL. We separately calculated the optical changes caused by the introduction of the $Al_{0.28}Ga_{0.72}As$ and then we estimated how much of the performance enhancement was due to the optical changes and how much was due to the SRV variation. Our estimation indicated one order of magnitude reduction in SRV (from 1 $\times$ 10 7 cm/s to 1 $\times 10^{6}$ cm/s).