Interface states and nc-Si dots induced charging/discharging effects in floating gate MOS structures
- Resource Type
- Conference
- Authors
- Liu, Guang-Yuan; Ma, Zhong-Yuan; Chen, Kun-Ji; Fang, Zhong-Hui; Qian, Xin-Ye; Jiang, Xiao-Fan; Zhang, Xian-Gao; Huang, Xin-Fan
- Source
- 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on. :1250-1252 Nov, 2010
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Computing and Processing
Interface states
Capacitance-voltage characteristics
Nonvolatile memory
Frequency measurement
Hysteresis
Logic gates
Annealing
- Language
Capacitance-voltage (C-V) and frequency dependent conductance-voltage (G-V) measurements have been carried out to investigate the charging and discharging effect induced by interface states and nanocrystalline Si (nc-Si) in floating gate MOS structures. Distinct conductance peaks are observed in the G-V curves for the floating gate with and without nc-Si dots. Based on the calculation of interface states density and charge density, the role of nc-Si and interface states is analyzed in detail.