GaInP solar cells grown on Ge-on-Ge engineered substrates
- Resource Type
- Conference
- Authors
- Kurstjens, Rufi; Courtois, Guillaume; Cho, Jinyoun; Dessein, Kristof; Garcia, Ivan; Rey-Stolle, Ignacio; Algora, Carlos; Depauw, Valerie; Porret, Clement; Loo, Roger
- Source
- 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC) Photovoltaic Specialists Conference (PVSC), 2021 IEEE 48th. :0175-0177 Jun, 2021
- Subject
- Components, Circuits, Devices and Systems
Power, Energy and Industry Applications
Photovoltaic systems
Performance evaluation
Fabrication
Photovoltaic cells
Conferences
Germanium
Junctions
germanium
engineered substrate
W/kg
Ge-on-Ge
multijunction solar cell
III-V growth
lift-off
- Language
The Umicore Ge-on-Ge engineered substrate concept consists of a thin epi-ready germanium foil that is weakly attached to a bulk germanium mother substrate. The weak layer is made through modification of the front side of the bulk substrate and allows for easy detachment at any point in the solar cell manufacturing flow. The mother substrate is intended to be re-used multiple times. This paper will present the growth and characterization of III-V layers on Ge-on-Ge engineered substrates as well as the subsequent GaInP single junction device fabrication and characterization. The Voc of the solar cells was unaffected, which proved the similar performance of bulk Ge and engineered Ge-on-Ge as epi-templates.