O-Band GeSi Quantum-Confined Stark Effect Electro-Absorption Modulator Integrated in a 220nm Silicon Photonics Platform
- Resource Type
- Conference
- Authors
- Porret, Clement; Srinivasan, Srinivasan Ashwyn; Balakrishnan, Sadhishkumar; Verheyen, Peter; Favia, Paola; Bender, Hugo; Ong, Patrick; Loo, Roger; Van Campenhout, Joris; Pantouvaki, Marianna
- Source
- 2020 IEEE Symposium on VLSI Technology VLSI Technology, 2020 IEEE Symposium on. :1-2 Jun, 2020
- Subject
- Components, Circuits, Devices and Systems
Silicon
Optical waveguides
Germanium silicon alloys
Quantum well devices
Optical buffering
Modulation
Photonics
GeSi
QCSE
waveguide-coupled
EAM
O-band
- Language
- ISSN
- 2158-9682
We report on a waveguide-coupled quantum-confined Stark effect (QCSE) electro-absorption modulator integrated in a 220nm Si photonics platform and operating in 1335–1365nm wavelength range. The device is based on a strain-balanced GeSi quantum well / barrier stack grown on an ultra-thin strain-relaxed buffer. The stack is only 450nm thick, facilitating optical coupling to sub-micron Si waveguides. An extinction ratio up to 8dB is achieved in a 40μm long device for a 1Vpp drive voltage, demonstrating the potential of this modulator for low-power optical interconnect applications.