GaAs BIJFET technology for linear circuits
- Resource Type
- Conference
- Authors
- Yang, J.Y.; Morris, F.J.; Plumton, D.L.; Jeffrey, E.N.
- Source
- 11th Annual Gallium Arsenide Integrated Circuit (GaAs IC) Symposium Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1989. Technical Digest 1989., 11th Annual. :341-344 1989
- Subject
- Engineered Materials, Dielectrics and Plasmas
Components, Circuits, Devices and Systems
Gallium arsenide
Linear circuits
Operational amplifiers
FETs
JFETs
Heterojunction bipolar transistors
Stability
Temperature distribution
Prototypes
Gain measurement
- Language
BIJFET (bipolar junction FET) technology that integrates p-channel JFETs and n-p-n HBTs (heterojunction bipolar transistors) has been developed. The devices are fabricated using epi overgrowth of an AlGaAs layer onto a GaAs layer, which simultaneously results in the emitter on the base for the n-p-n and the gate on the channel for the PJFET. The individual HBTs and PJFETs showed better stability over a wide temperature range than comparable Si devices. A prototype op amp was designed to demonstrate the capability of the BIJFET process. A measured open-loop gain of 50 dB and an open-loop gain bandwidth product of 3.6 GHz compare favorably with those of Si monolithic BIJFET op amps.ETX