Reduction of Interface States Stress Generation by Oxygen Annealing of ALD Nanolaminated HfO2/Al2O3 Dielectric Stacks for Charge Trapping Devices
- Resource Type
- Conference
- Authors
- Skeparovski, A.; Novkovski, N.; Paskaleva, A.; Spassov, D.
- Source
- 2021 IEEE 32nd International Conference on Microelectronics (MIEL) Microelectronics (MIEL), 2021 IEEE 32nd International Conference on. :153-156 Sep, 2021
- Subject
- Components, Circuits, Devices and Systems
Resistance
Rapid thermal annealing
Oxygen
Silicon
Interface states
Hafnium compounds
Dielectrics
- Language
- ISSN
- 2159-1679
In this work we analyze the effects of rapid thermal annealing (RTA) in 02 on the interface state density in MIS structures containing charge trapping HfO2/ Al2O3 nanolaminated dielectric stacks obtained by atomic layer deposition. The density of interface states increases after annealing in O2, but generation of new interface states as a result of electrical stress is strongly reduced. R T A in O2 affects also the bulk properties of the stacks, by suppressing the formation of stress-induced positive charge. The correlation between these two effects is discussed.