Indium tin oxide film characterization using the classical Hall Effect
- Resource Type
- Conference
- Authors
- van Beveren, L.H. Willems; Panchenko, E.; Anachi, N.; Hyde, L.; Smith, D.; James, T.D.; Roberts, A.; McCallum, J.C.
- Source
- 2014 Conference on Optoelectronic and Microelectronic Materials & Devices Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2014 Conference on. :144-145 Dec, 2014
- Subject
- Bioengineering
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Signal Processing and Analysis
Films
Indium tin oxide
Conductivity
Annealing
Hall effect
Silicon
Charge carrier density
Hall Effect
indium tin oxide
magnetic field measurement
semiconductor devices
- Language
- ISSN
- 1097-2137
2377-5505
We have used the classical Hall Effect to electrically characterize indium tin oxide (ITO) films grown by two different techniques on silica substrates. ITO films have the unique property that they can be both electrically conducting (and to be used for a gate electrode for example) as well as optically transparent (at least in the visible part of the spectrum). In the near infrared (NIR) the transmission typically reduces. However, the light absorption can in principle be compensated by growing thinner films.