A 38GHz SPDT Traveling Wave Switch with 5A CDM ESD Protection in 45nm PDSOI for 5G System
- Resource Type
- Conference
- Authors
- Di, Mengfu; Hao, Weiquan; Li, Xunyu; Pan, Zijin; Miao, Runyu; Wang, Albert
- Source
- 2023 IEEE Radio and Wireless Symposium (RWS) Radio and Wireless Symposium (RWS), 2023 IEEE. :17-19 Jan, 2023
- Subject
- Aerospace
Bioengineering
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Engineering Profession
Fields, Waves and Electromagnetics
General Topics for Engineers
Photonics and Electrooptics
Power, Energy and Industry Applications
Signal Processing and Analysis
Wireless communication
Radio frequency
Performance evaluation
5G mobile communication
Silicon-on-insulator
Switches
Insertion loss
5G
switch
SPDT
CDM
ESD
traveling wave
SOI
- Language
- ISSN
- 2164-2974
This paper presents co-design and analysis of a 38GHz traveling wave single-pole double-through (SPDT) RF switch with robust ESD protection implemented in 45nm PDSOI technology 5G systems in millimeter-wave bands. Substrate coupling is minimized by a buried oxide (BOX) layer. The original switches exhibit insertion loss (IL) of −1.4dB and isolation (Iso) of ~59dB at 38GHz. The design goal of robust charged device model (CDM) ESD protection was realized, achieving ~5A in measurement. Human body model (HBM) ESD of ~2KV was also achieved. The ESD-protected SPDT achieves IL of −3.49dB and Iso of −49dB at 38GHz. Design analysis reveals significant impact of ESD protection on SPDT performance, which was minimized through careful co-design effort, improving insertion loss by ~0.8dB at 38GHz.