Self-Heating Effects on Hot Carrier Degradation and its Impact on Ring-Oscillator Reliability
- Resource Type
- Conference
- Authors
- Paliwoda, P.; Chbili, Z.; Kerber, A.; Nigam, T.; Singh, D.; Nagahiro, K.; Manik, P.P; Cimino, S.; Misra, D.
- Source
- 2018 International Integrated Reliability Workshop (IIRW) Integrated Reliability Workshop (IIRW), 2018 International. :01-04 Oct, 2018
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
self-heating
ring oscillator
hot carrier injection
reliability
heat sensor
- Language
- ISSN
- 2374-8036
This paper discusses the impact of self-heating (SH) on ring-oscillator (RO) reliability and its correlation to hot carrier (HC) degradation. We show that HC degradation modulation due to SH is only significant for logic PFETs at highly accelerated conditions. We show that these SH effects on HC are greatly reduced at moderate acceleration. By stressing the ROs at extreme conditions, we show that the SH impact on HC does not affect RO degradation.