Self-Heating Effects on Hot Carrier Degradation and Its Impact on Logic Circuit Reliability
- Resource Type
- Periodical
- Authors
- Paliwoda, P.; Chbili, Z.; Kerber, A.; Nigam, T.; Nagahiro, K.; Cimino, S.; Toledano-Luque, M.; Pantisano, L.; Min, B.W.; Misra, D.
- Source
- IEEE Transactions on Device and Materials Reliability IEEE Trans. Device Mater. Relib. Device and Materials Reliability, IEEE Transactions on. 19(2):249-254 Jun, 2019
- Subject
- Engineered Materials, Dielectrics and Plasmas
Components, Circuits, Devices and Systems
Power, Energy and Industry Applications
Degradation
Temperature measurement
Heating systems
Stress
Acceleration
Temperature sensors
Hot carriers
Self-heating
ring oscillator
hot carrier injection
reliability
heat sensor
- Language
- ISSN
- 1530-4388
1558-2574
This paper discusses the impact of self-heating (SH) on ring-oscillator (RO) reliability and its correlation to hot carrier (HC) degradation. We show that HC degradation modulation due to SH is only significant for logic PFETs at highly accelerated dc conditions. We show that these SH effects on HC are greatly reduced at moderate acceleration. By stressing the ROs at extreme conditions, we show that the SH impact on HC does not affect RO degradation.