A wide temperature range voltage bandgap reference generator in 32nm CMOS technology
- Resource Type
- Conference
- Authors
- Singh, Anjani Kumar; Pal, Pratosh Kumar; Pattanaik, Manisha
- Source
- 2015 Global Conference on Communication Technologies (GCCT) Communication Technologies (GCCT), 2015 Global Conference on. :696-699 Apr, 2015
- Subject
- Aerospace
Communication, Networking and Broadcast Technologies
Computing and Processing
Fields, Waves and Electromagnetics
Power, Energy and Industry Applications
Robotics and Control Systems
Signal Processing and Analysis
Photonic band gap
CMOS integrated circuits
CMOS technology
Temperature distribution
Transistors
Generators
Operational amplifiers
Bandgap voltage reference
PTAT
CTAT
temperature coefficient
32nm CMOS technology
operational amplifier
poly-silicon resistors
start-up circuit
- Language
This paper proposes a new CMOS based Bandgap voltage reference generator (BGR) circuit by using polysilicon resistors in 32nm CMOS technology. This reference generator uses a three stage operational amplifier for improved performance over previously proposed BGR circuits. The proposed design is simulated in Synopsys HSPICE simulator. This circuit produces an output reference voltage of 0.725V at the room temperature (25ºC) for the supply voltage of 1.8V. Analysis shows that, a very low temperature coefficient (TC) of 13ppm/ºC is obtained in the output reference voltage for the temperature range of −40ºC to 100ºC. Using poly-silicon resistor the area is reduced, without losing too much control over current consumption.