Ultrathin Cu(In, Ga)Se2 solar cells
- Resource Type
- Conference
- Authors
- Naghavi, Negar; Jehl, Zacharie; Erfurth, Felix; Guillemoles, Jean-Francois; Donsanti, Frederique; Gerard, Isabelle; Tran-Van, Pierre; Bouttemy, Muriel; Etcheberry, Arnaud; Pelouard, Jean-Luc; Collin, Stephane; Colin, Clement; Pere-Laperne, Nicolas; Dahan, Nir; Greffet, Jean-Jacques; Morel, Boris; Djebbour, Zakaria; Darga, Arouna; Mencaraglia, Denis; Voorwinden, Georg; Dimmler, Bernhard; Powalla, Michael; Lincot, Daniel
- Source
- 2011 37th IEEE Photovoltaic Specialists Conference Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE. :003642-003645 Jun, 2011
- Subject
- Components, Circuits, Devices and Systems
Photonics and Electrooptics
Power, Energy and Industry Applications
Engineered Materials, Dielectrics and Plasmas
Photovoltaic cells
Gold
Etching
Optical reflection
Absorption
Coatings
Materials
- Language
- ISSN
- 0160-8371
Within the UltraCIS project we have started to explore the possibility of reducing down the thickness of the Cu(In, Ga)Se 2 (CIGSe) layer to the sub-micron level (0.1μm) while maintaining a high efficiency level of solar cells. The three main approaches we used are: — Reducing the CIGSe thickness by chemical etching combining the thickness reduction and smoothing effect of the absorber. Efficiency higher than 10 % on small area cells with an absorber thickness of 0.5 μm are obtained. Losses were attributed exclusively to the reduced photocurrent and the loss on texturation of the absorber — Optical management by front contact texturation or by replacement of the back contact by the “lift-off” of CIGSe layer from the Mo layer and deposition of a new reflective back contact. — Application of plasmonic structures to CIGSe solar cells enabling light confinement at the subwavelength scale