Soft- and Hard-Error Radiation Reliability of 228 KB $3\mathrm{T}+1\mathrm{C}$ Oxide Semiconductor Memory
- Resource Type
- Conference
- Authors
- Takahashi, H.; Okamoto, Y.; Hamada, T.; Komura, Y.; Watanabe, S.; Tsuda, K.; Sawai, H.; Matsuzaki, T.; Ando, Y.; Onuki, T.; Kunitake, H.; Yamazaki, S.; Kobayashi, D.; Ikuta, A.; Makino, T.; Ohshima, T.
- Source
- 2023 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2023 IEEE International. :1-6 Mar, 2023
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Engineering Profession
Space radiation
Random access memory
X-rays
Logic gates
Silicon
Transistors
Integrated circuit reliability
Indium gallium zinc oxide (IGZO)
nonvolatile memory
oxide semiconductor
single event upsets (SEUs)
total ionizing dose (TID)
- Language
- ISSN
- 1938-1891
We prototyped a 228 KB oxide semiconductor memory utilizing field-effect transistors with a c-axis-aligned crystalline oxide semiconductor (CAAC-OSFETs) and evaluated its tolerance to hard errors caused by X-rays and soft errors caused by heavy-ion beams. Evaluation results demonstrate that the OS memory has radiation tolerance high enough to operate properly even in space radiation environments.