Effect of sulfur treatment on the γ-ray detection quality of Al/CdTe/Pt Schottky diode
- Resource Type
- Conference
- Authors
- Yamazato, Masaaki; Yamauchi, Tetsuya; Ohno, Ryoichi; Higa, Akira
- Source
- 2008 IEEE Nuclear Science Symposium Conference Record Nuclear Science Symposium Conference Record, 2008. NSS '08. IEEE. :246-249 Oct, 2008
- Subject
- Nuclear Engineering
Power, Energy and Industry Applications
Fields, Waves and Electromagnetics
Engineered Materials, Dielectrics and Plasmas
Signal Processing and Analysis
Bioengineering
Schottky diodes
Surface treatment
Radiation detectors
Leakage current
Leak detection
Pulse measurements
Pulse amplifiers
Voltage
X-ray detection
X-ray detectors
- Language
- ISSN
- 1082-3654
We have studied the effects of sulfur treatment on the performance of an Al/CdTe/Pt Schottky diode. The CdTe(111)Te surface was treated by (NH 4 ) 2 S x solution before deposition of Al Schottky electrode. The Te-rich layer on the CdTe surface was removed and the CdS thin layer was grown by sulfur treatment. After 2 min sulfur treatment, the leakage current at 600 V applied voltage of Al/CdTe/Pt Schottky diode was remarkably decreased than non-treated sample. Also, the polarization phenomenon was drastically suppressed by sulfur treatment. After 20 hours from the start of the γ-ray detection, FWHM of 59.5 keV showed less than 2.0 keV.