Impact of random telegraph noise on write stability in Silicon-on-Thin-BOX (SOTB) SRAM cells at low supply voltage in sub-0.4V regime
- Resource Type
- Conference
- Source
- 2015 Symposium on VLSI Technology (VLSI Technology) VLSI Technology (VLSI Technology), 2015 Symposium on. :T38-T39 Jun, 2015
- Subject
Computing and Processing Power, Energy and Industry Applications Robotics and Control Systems Transportation SRAM cells Gaussian distribution Current measurement Stability analysis Circuit stability Fluctuations - Language
- ISSN
- 0743-1562
2158-9682