Interplay between intrinsic bi-layers and overlying doped layers in a-Si:H/c-Si heterojunction solar cells
- Resource Type
- Conference
- Authors
- Sai, Hitoshi; Matsui, Takuya; Nunomura, Shota; Matsubara, Koji
- Source
- 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC) Photovoltaic Energy Conversion (WCPEC), 2018 IEEE 7th World Conference on. :2060-2063 Jun, 2018
- Subject
- Aerospace
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Power, Energy and Industry Applications
Photovoltaic cells
Passivation
Density measurement
Power system measurements
Silicon
Heterojunctions
Plasmas
silicon
amorphous silicon
heterojunction
surface passivation
PECVD
- Language
Interplay between intrinsic bi-layers and overlying doped layers in a-Si:H/c-Si heterojunction solar cells was investigated. Insertion of the more porous intrinsic a-Si:H layer at the a-Si:H/c-Si interface is beneficial to mitigate the degradation of the surface passivation after p-layer deposition. This interfacial layer was also applied to SHJ solar cells, and a notably high V$_{OC}$ of 0.742 as well as a high conversion efficiency of 22.2% was achieved.