In this contribution, we present developments aiming at overcoming remaining challenges for an industrial process integration of passivating contact technologies. In particular, SiC x -based hole and electron passivating contacts activated respectively during a short and a long annealing step are developed. Implied Voc's up to 730mV have been obtained on symmetrical structures featuring SiC x (p) layers having undergone short annealing, and above 750mV for those featuring SiC x (n) submitted to long annealing. Finally, these contacts are implemented as easy add-ons in existing industrial PERC/PERT like cell architectures. First integration tests of SiC x (p) in PERC like cell featuring front phosphorous emitter have led to Voc of 686mV and cell efficiency up to 21.7% on 6inch p-type Cz. Integration of SiC x (n) in PERT like solar cells featuring a front boron emitter enabled Voc of 691mV and efficiency of 22.5% on 6 inch n-type Cz.