Bonded InGaAs cells for microsystems enabled photovoltaics
- Resource Type
- Conference
- Authors
- Tauke-Pedretti, Anna; Cederberg, Jeffrey G.; Cruz-Campa, Jose L.; Alford, Charles; Sanchez, Carlos A.; Luna, Ian; Nelson, Jeffrey S.; Nielson, Gregory N.
- Source
- 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC) Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th. :0546-0549 Jun, 2014
- Subject
- Components, Circuits, Devices and Systems
Silicon
Indium phosphide
Indium gallium arsenide
Substrates
Current measurement
Fabrication
Size measurement
multi-junction solar cells
wafer bonding
photovoltaic cells
III–V solar cells
- Language
- ISSN
- 0160-8371
InGaAs solar cells bonded to a Si substrate are demonstrated. These cells are 160 µm to 1300 µm in diameter and designed for integration in microsystems enabled photovoltaic systems. When compared to devices fabricated on substrate no degradation of cell performance was observed due to bonding. Additionally, the short circuit current for the cells correlated well with simulations indicating a low loss optical path through the bonding interface.