Nucleation-step study of silicon homoepitaxy for low-temperature fabrication of Si solar cells
- Resource Type
- Conference
- Authors
- Mosleh, Aboozar; Ghetmiri, Seyed Amir; Conley, Benjamin R.; Abu-Safe, Husam; Waqar, Zafar; Benamara, Mourad; Yu, Shui-Qing; Naseem, Hameed A.
- Source
- 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th. :2646-2650 Jun, 2013
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Power, Energy and Industry Applications
Rough surfaces
Surface roughness
Silicon
Plasma temperature
Surface contamination
Surface cleaning
epitaxial layers
crystalline materials
silicon
- Language
- ISSN
- 0160-8371
Smooth nucleation of silicon has been achieved as a critical step in epitaxial growth process using ultra high vacuum chemical vapor deposition system at 250°C. Proper conditions were achieved by studying the effect of key nucleation parameters such as plasma power, hydrogen dilution and deposition temperature. High-resolution transmission electron microscopy has been employed to study rough nucleation condition in order to achieve perfect nucleation step, which resulted in high quality epilayers.